| PART |
Description |
Maker |
| STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics
STMicroelectronics
|
| NDF0610D10Z NDF0610D29Z |
180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
FAIRCHILD SEMICONDUCTOR CORP
|
| TP0205A-T1-E3 |
180 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| 2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor
|
| RFH25N18 |
25 A, 180 V, 1.875 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
HARRIS SEMICONDUCTOR
|
| IRF240 |
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET
18A, 200V, 0.180 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| APTM50AM17F APTM50AM17FG |
180 A, 500 V, 0.017 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg MOSFET Power Module
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| MRF5P21180 |
2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET
From old datasheet system
|
Motorola
|
| STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package
|
ST Microelectronics
|
| FGA180N30D FGA180N30DTU |
300V PDP IGBT 180 A, 300 V, N-CHANNEL IGBT
High Current Capability
|
Fairchild Semiconductor, Corp.
|
|
